HIGHLIGHTS
- who: Yujia Liu et al. from the Leibniz-Institut für Kristallzüchtung, Max-Born-Straße, Berlin, Germany have published the article: Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits, in the Journal: (JOURNAL)
- what: The authors study the impact of such threading dislocations on the strain relaxation of the Si quantum well layers and discuss the critical thickness in terms of the model presented by Matthews and Blakeslee . The authors show that misfit dislocations form above the critical thickness defined by the Matthews-Blakeslee criterion. For clarity, the authors . . .
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