HIGHLIGHTS
- who: Henryk Turski et al. from the Institute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland Department of Electrical and Computer Engineering Cornell University, Ithaca, NY, USA have published the research: Role of Metallic Adlayer in Limiting Ge Incorporation into GaN, in the Journal: Materials 2022, 5929 of /2022/
- what: The authors show an experimental study presenting a striking improvement in sharpness of the Ge doping profile obtained for indium as compared to the gallium surfactant layer during GaN-plasma-assisted molecular beam epitaxy. This study showed that the state of the surface . . .
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