Sapphire selective laser etching dependence on radiation wavelength and etchant

HIGHLIGHTS

• who: Agnu0117 Butkutu0117 et al. from the Research Center, Vilnius University, Sauleu0307tekio ave10, Vilnius, Lithuania have published the paper: Sapphire Selective Laser Etching Dependence on Radiation Wavelength and Etchant, in the Journal: Micromachines 2023, 14, 7. of /2023/
• what: The authors demonstrate a comparison between different wavelength (1030 nm 515 nm 343 nm) usage for material modification and various etchants (hydrofluoric acid sodium hydroxide potassium hydroxide and sulphuric and phosphoric acid mixture) comparison. The authors have demonstrated a protocol that allows 3D structure formation out of crystalline sapphire.
• how: The authors identified the . . .
  

   

  

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