HIGHLIGHTS
- who: cairo from the Department of Electrical and Electronics Engineering Birla Institute of Technology and Science (BITS), Pilani, Rajasthan, India have published the article: Sebuah Kajian Pustaka:, in the Journal: (JOURNAL) of November/23,/2015
- what: The paper presents a variability-aware modified 9T SRAM cell. This paper proposes a modified nine transistors SRAM cell (hereafter called M9T) and their thorough evaluation performance which is compared with 6T in sub-threshold regime at 45nm technology.
SUMMARY
SRAM (static random access memory) cell stability with voltage scaling is a primary concern in . . .
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