Selective-area growth of single-crystal wurtzite gan nanorods on siox/si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing

HIGHLIGHTS

• who: Elena Alexandra Serban from the (UNIVERSITY) have published the paper: Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing, in the Journal: (JOURNAL) of 12/06/2017
• what: We have reported on the initial growth stages and the time evolution of SAG GaN c-oriented NRs directly grown on Si(001) substrates by MSE.

SUMMARY

The GaN NRs were grown vertically to the substrate surface with the growth direction along c-axis in the well-defined . . .

 



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