Selective etching of silicon nitride over silicon oxide using clf3/h2 remote plasma

HIGHLIGHTS

• who: Won Oh Lee from the SchoolSungkyunkwan University Cambridge, MA, USA have published the research: Selective etching of silicon nitride over silicon oxide using ClF3/H2 remote plasma, in the Journal: Scientific Reports Scientific Reports of 17/03/2022
• what: The isotropic and selective etching of u00adSiNx over u00adSiOy was studied using u00adClF3/H2 remote plasma with an ICP source.

SUMMARY

MHz RF power was applied to the planar type ICP coil at upper side of a chamber. For the isotropic etching of S­ iNx, double grids with multiple holes with . . .

 



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