Self-assembled inas/gaas single quantum dots with suppressed ingaas wetting layer states and low excitonic fi ne structure splitting for quantum memory

HIGHLIGHTS

• who: YingYu from the Information Technology, Sun Yat-Sen University, Guangzhou, Sun Yat-Sen University, Guangzhou, China have published the article: Self-assembled InAs/GaAs single quantum dots with suppressed InGaAs wetting layer states and low excitonic fi ne structure splitting for quantum memory, in the Journal: (JOURNAL)
• what: We have demonstrated an effective QD growth method for generating entangled photon pairs at wavelength of 880 and 980 nm via capping S-K grown In(Ga) As/GaAs QDs with an ultra-thin AlxGa1-xAs layer.
• future: The full theoretical explanation for the . . .
  

   

  

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