HIGHLIGHTS
- who: . and colleagues from the Department of Electrical Engineering and Convergence Engineering for Intelligent Drones, Sejong University, Neungdong-ro, Gwangjin-gu have published the research: Self-rectifying characteristics observed in O-doped ZrN resistive switching memory devices using Schottky barrier type bottom electrode, in the Journal: (JOURNAL)
- what: The authors investigated the self-rectifying characteristics of p-Si/O-doped ZrN/TiN structures to overcome a disturbance between neighboring cells in array structures.
- how: The authors proposed a p-Si/O-doped ZrN(O-ZrN)/TiN structure to fabricate self-rectifying RRAM devices . . .
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