Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with si0.6ge0.4 source biosensor considering non-ideal factors

HIGHLIGHTS

  • What: The authors consider sensitivity of ON current for BM-SO-HTFET biosensor as shown in_(3). In this paper, a high-k stacked gate with bi-metal hetero-juncture TFET is proposed for label free biosensing applications.
  • Who: Rittik Ghosh et al. from the School of Electronics Engineering, Vellore Institute of Technology, Vellore, Tamil Nadu, India, Department of Electronics and Communication Engineering, CV Raman Global University, Bhubaneswar have published the article: Sensitivity analysis of bi-metal stacked-gate-oxide hetero-juncture tunnel fet with Si0.6Ge0.4 source biosensor considering non-ideal factors, in . . .

     

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