Simulation based comparison between a transversal and a tangential memristor model with a capacitance in parallel

HIGHLIGHTS

• who: Oliver Pabst et al. from the Department of Physics, University of Oslo, Oslo, Norway, Department of Clinical and Biomedical have published the research work: Simulation based comparison between a transversal and a tangential memristor model with a capacitance in parallel, in the Journal: PLOS ONE | https://doi.org/10.1371/journal.pone [0221533]. August 23, 2019 of /1371/
• what: The authors demonstrate here by simulations that hysteresis loops with two pinched points can be achieved if a tangential memristor model is connected in parallel to a capacitance.
• how: The here chosen tangential . . .
  

   

  

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