HIGHLIGHTS
- who: Xiaodong Zhang and collaborators from the School of Computer Science and Technology, Hainan University, Haikou, China have published the article: Simulation Study of Low Turn-Off Loss and Snapback-Free SA-IGBT with Injection-Enhanced p-Floating Layer, in the Journal: Electronics 2022, 2022, 11, 11, xx FOR FOR PEER PEER REVIEW REVIEW Electronics of /2022/
- what: In this study a shorted-anode IGBT with an injection-enhanced p-floating layer (IEPF-IGBT) under the N-buffer layer is proposed. In this study, a 1.2 kV shorted-anode IGBT developed using Silvaco TCAD . . .
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