HIGHLIGHTS
- who: N OMENCLATURE and collaborators from the EGurpinar and ACastellazzi are with the Power Electronics, Machines and Control (PEMC) research group, Tower Building, University Nottingham, University Park, Nottingham, RD, UKEmail: have published the Article: Single-Phase T-Type Inverter Performance Benchmark Using Si IGBTs, SiC MOSFETs and GaN HEMTs, in the Journal: (JOURNAL)
- what: In this paper, performance analysis of three different device technologies (SiC, GaN and Si) at 600V blocking voltage range is discussed based on a three level single phase inverter. In this paper, three different power device technologies for single-phase power . . .
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