Skin-compatible amorphous oxide thin-film-transistors with a stress-released elastic architecture

HIGHLIGHTS

• who: Kyung-Tae Kim et al. from the School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, Korea have published the research work: Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture, in the Journal: (JOURNAL) of 14/06/2021
• what: To realize skin-compatible electronics, the authors propose reverse-trapezoid-structured a-IGZO TFTs in a stretchable matrix by employing a complementary metal-oxide semiconductor-compatible photolithography process with commercialized homogeneous elastomeric materials.
• how: [kg/m3 ] Density Young's modulus Poisson's ratio Cr Au Al2 O3 . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.