HIGHLIGHTS
- who: Utilisateur de Microsoft Office from the Aix Marseille Univ, CNRS, IM NP UMR, rue FJoliot-Curie, Marseille , France have published the research work: Special issue on Advancement in Engineering Technology Impact of Line Resistance Combined with Device on Memories, in the Journal: (JOURNAL)
- what: In this paper the performance and reliability of oxide-based (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device Indeed common problems with ReRAM are related to high in operating conditions and low yield. The model implementation focused on this dependence which is crucial . . .
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