Stability, evolution and diffusion of intrinsic point defects in 4h-sic

HIGHLIGHTS

• who: Marianne Etzelmu00fcller Bathen et al. from the Advanced Power Semiconductor Laboratory, ETH Zu00fcrich, Zu00fcrich, Switzerland Department of Physics, University of Oslo, Oslo, Norway have published the research work: Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC, in the Journal: (JOURNAL)
• what: The controversy on the nature of the EH5 trap in particular is addressed where the authors propose the presence of two overlapping defect peaks: one metastable level that appears after low energy electron irradiation below the silicon displacement limit and one more stable level that gradually decreases in concentration until . . .
  

   

  

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