Stm/sts study of the density of states and contrast behavior at the boundary between (7 7)n and (8 8) structures in the sin/si(111) system

HIGHLIGHTS

SUMMARY

Feenstra et_al studied the Si(111)-(2 × 1) surface structure using STM/STS and discussed various aspects of tunneling, for example, current-voltage characteristics (I-V) depending on the probe-sample separation, as well as oscillating the dependence of tip- sample separation versus voltage at the constant tunneling current arising from barrier resonances. Looking ahead it can be noted that, in the present work, completely different behavior of the contrast, as a function of tunnel bias at the boundaries between the (8 × 8) islands and the surrounding (7 × 7)N structure, was experimentally observed . . .

 



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