Strain-stabilized solid phase epitaxy of si-ge on si

HIGHLIGHTS

• who: Si., and Permanent, link from the This Article was downloaded from Harvard University have published the paper: Strain-Stabilized Solid Phase Epitaxy of Si-Ge on Si, in the Journal: (JOURNAL) of 14/06/2006
• what: The authors compare solid phase epitaxial growth of amorphous Si-Ge alloys created by Ge ion implantation into Si with and without the imposition of 0.5 GPa of externally applied biaxial tensile stress. In Fig 3 the authors compare XTEM images of the a / c interface for two regions of the same low-dose !10% peak" sample . . .
  

   

  

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