Structural analysis of low defect ammonothermally grown gan wafers by borrmann effect x-ray topography

HIGHLIGHTS

• who: Lutz Kirste et al. from the Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastraße, Freiburg, Germany Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Japan have published the research work: Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography, in the Journal: Materials 2021, 14, 5472. of /2021/
• what: The authors show that this laboratory technique in transmission geometry is well suited for a routine analysis of low defect Am-GaN wafers for the development as well as process monitoring. This study reveals that not only micro . . .
  

   

  

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