HIGHLIGHTS
- who: Electrical resistivity and collaborators from the (UNIVERSITY) have published the research: Structural, optical and electrical properties of ZnO:Al thin films for optoelectronic applications, in the Journal: (JOURNAL)
- what: X-ray diffraction studies showed that the films are polycrystalline and the peaks fit well to the hexagonal wurtzite structure with a preferred orientation along the (002) direction which is located at 2 θ=34.44 along the c axis.
- how: In this work sol-gel technique was used to enhance the optoelectronic properties of ZnO thin films.
SUMMARY
In . . .
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