Sub-10 fj/bit radiation-hard nanoelectromechanical non-volatile memory

HIGHLIGHTS

• who: Yong-Bok Lee from the (UNIVERSITY) have published the Article: Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory, in the Journal: (JOURNAL) of 22/08/2022
• what: The authors report a nanoelectromechanical non-volatile memory (NEM-NVM) with an ultra-low energy consumption and radiation-hardness. 1 Here, the authors report a sub-10 fJ bit energy-efficient and radiationhard NEM-NVM fabricated with well-established complementary metal-oxide-semiconductor (CMOS) manufacturing processes. The ultra-smallp mass ffiffiffiffiffiffiffiffiffiffiffiisffi also the main reason for the high resonance frequency (u03c9 / km1 ) of the fabricated . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or E-mail:

  If you don't have an account, you can create one here.