Suppression of stacking-fault expansion in 4h-sic pin diodes using proton implantation to solve bipolar degradation

HIGHLIGHTS

• who: Masashi Kato from the Nagoya InstituteImazaike, Saijo, Ehime, u20111393, Japan Nagoya University have published the research work: Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation, in the Journal: Scientific Reports Scientific Reports of 21/08/2022
• future: This is possibly due to imperfect ohmic contacts fabricated using the process which will be solved in the near future.

SUMMARY

Current-voltage characteristics for the PiN diodes with and without proton implantation at room temperature. To overcome the deterioration of device performance by . . .

 



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