Suppression of stacking fault expansion in a 4h-sic epitaxial layer by proton irradiation

HIGHLIGHTS

• who: Shunta Harada from the Center for IntegratedNagoya University have published the article: Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation, in the Journal: Scientific Reports Scientific Reports
• what: The authors investigated stacking fault expansion in SiC epitaxial layers subjected to proton irradiation.

SUMMARY

The maximum hydrogen densities in the specimens subjected to 0.6-MeV and 0.95-MeV proton irradiation occurred at about 5 and 10 μm, respectively. To further confirm the effect of proton irradiation on dislocation glide, the authors investigated SF . . .

 



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