HIGHLIGHTS
- who: Submitted et al. from the Nano Research Group, Electronics and Computer Science, University of Southampton, Southampton, Hampshire, United Kingdom, SO BJ , Faculty of Engineering and the Environment, University of Southampton, Southampton, Hampshire, United Kingdom, SO BJ have published the article: Switching kinetics of SiC resistive memory for harsh environments, in the Journal: (JOURNAL) of 09/07/2015
- what: In this work, a condition of the numerical model is proposed enabling the switching mechanism to be determined.
SUMMARY
Figure 1 shows the 40nm thick SiC layer situated between the Cu and . . .
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