Tailoring magnetism in silicon-doped zigzag graphene edges

HIGHLIGHTS

  • who: Andoni Ugartemendia from the (UNIVERSITY) have published the research: Tailoring magnetism in silicon-doped zigzag graphene edges, in the Journal: Scientific Reports Scientific Reports of 18/07/2022

SUMMARY

    The authors concentrate on those Si-doped edge conformations in which a local inversion of the edge spin-polarization is induced. The stability of Si edge doping in ZGNRs is studied. In S1 one Si atom replaces one C atom at the sublattice A. This geometry, which has been experimentally observed by Chen et_al23 has a formation energy of - 0.29 eV. At . . .

     

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