HIGHLIGHTS
- who: Enrique Maset and colleagues from the Department Electronic Engineering, University of Valencia, Burjassot, Spain have published the research work: Temperature-Dependent Dynamic on Resistance in Gamma-Irradiated AlGaN/GaN Power HEMTs, in the Journal: (JOURNAL)
- what: In space applications, extreme environments due to radiation are among the main reasons for the reduced reliability of semiconductor components. The failure mechanisms of compound semiconductor 2 of 14 devices have frequently shown high values of activation_energy at higher temperatures; therefore, the combined effects of temperature and radiation were the focus of this study. The aim of this . . .
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