HIGHLIGHTS
- who: InGaN/GaN light emitting diodes and colleagues from the DepartmentUniversity of Bath, Bath, United Kingdom have published the research: The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes, in the Journal: (JOURNAL) of 21/Dec/2017
- what: In this paper the measured variations in the external quantum efficiency of a range of LEDs with different numbers of quantum wells (QWs) are shown to compare closely with the predictions of a revised ABC model in which it is assumed that the electrically injected electrons . . .
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