The barrier’s heights and its inhomogeneities on diamond silicon interfaces

HIGHLIGHTS

  • who: Szymon Łoś and colleagues from the Institute of Mathematics and Physics, Bydgoszcz University of Science and Technology, Profesora Sylwestra Kaliskiego, Bydgoszcz, Poland have published the paper: The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces, in the Journal: Materials 2022, 5895 of /2022/
  • what: In this work the electrical parameters of the polycrystalline diamonds' p-PCD/n-Si heterojunction were investigated using temperature-dependent current-voltage (I-V) characteristics. In the present work, the heterojunctions of p-type PCD/n-Si were developed.

SUMMARY

    Although diamond exhibits several . . .

     

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