The characterization of amorphous azo-n/si-p hetrojunction diode for solar cell application

HIGHLIGHTS

  • who: Amorphous and colleagues from the Islamic Azad University Tehran, Iran have published the paper: The Characterization of Amorphous AZO-n/Si-p Hetrojunction Diode for Solar Cell Application, in the Journal: (JOURNAL)
  • what: The aim of this study is to verify the effect of temperature variation on zinc oxide doped with aluminum (AZO) thin films deposited on p-type silicon (Si) substrates.

SUMMARY

    Transparent conducting oxide (TCO) films have attracted a lot of attention in recent decades. [14] fabricated Al-doped n-ZnO/p-Si heterojunctions by the deposition of . . .

     

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