HIGHLIGHTS
- who: Zhiqiang Yu and collaborators from the Faculty of Electronic Engineering, Guangxi University of Science and Technology, Liuzhou, China have published the research work: The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device, in the Journal: Sensors 2023, 3480 of /2023/
- what: In this paper the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO2 nanowire-based W/TiO2 /FTO memory device is analyzed. [16-19,21-29,31], theprevious W/TiOreports 2/FTO memory device in this work has a relatively lo . . .
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