The effect of the doping amount on electroelastic coupled-wave scattering and dynamic stress concentration around defects in bnt doped fn materials

HIGHLIGHTS

  • who: Jiawei Fan and collaborators from the School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou, China have published the Article: The Effect of the Doping Amount on Electroelastic Coupled-Wave Scattering and Dynamic Stress Concentration around Defects in BNT Doped FN Materials, in the Journal: Materials 2022, 5781 of /2022/
  • what: In this study the electroelastic coupled-wave diffraction and dynamic stress concentration of BNT-xFN materials with triangular defects under the incidence of anti-plane shear waves were studied. The Maxwell equation and dynamic equation this to paper, the electroelastic coupling wave used to . . .

     

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