The fabrication of indium-gallium-zinc oxide sputtering targets with various gallium contents and their applications to top-gate thin-film transistors

HIGHLIGHTS

  • who: Tsung-Cheng Tien and colleagues from the Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan have published the research work: The Fabrication of Indium-Gallium-Zinc Oxide Sputtering Targets with Various Gallium Contents and Their Applications to Top-Gate Thin-Film Transistors, in the Journal: Coatings 2022, 1217 of 19/08/2022
  • what: The authors investigated the influence of Ga content on the transport properties of IGZO layers and on the electrical properties of IGZO TFTs. The aim of the XRD analysis was to determine the correlations between . . .

     

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