The non-volatile electrostatic doping effect in mote2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

HIGHLIGHTS

• who: Muhammad Asghar Khan from the DepartmentSejong University have published the article: The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate, in the Journal: Scientific Reports Scientific Reports
• what: We herein reported the fabrication of u00adMoTe2 field-effect transistors (FETs) on hexagonal boron nitride (h-BN) with a localized metal gate and found that the photo-induced doping treatment was most effective for thinner u00adMoTe2 flakes mounted on a thicker h-BN layer.

SUMMARY

| 1 Vol.:(0123456789) its exceptional thermal . . .

 



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