The role of annealing ambient on diffusion of implanted si in β-ga2o3

HIGHLIGHTS

• who: Ribhu Sharma and collaborators from the Department University of Florida, Gainesville, Florida, USA have published the Article: The role of annealing ambient on diffusion of implanted Si in β-Ga2O3, in the Journal: (JOURNAL)
• what: The work shows that the N2 anneal suppresses Si migration and loss to the surface, but more work is needed on the exact mechanism.

SUMMARY

Tadjer et_al25 reported damage recovery and diffusivity of implanted Si and Sn in Ga2 O3 during annealing in O2 at temperatures from 900-1150 ○ C. Both species were observed to redistribute . . .

 



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