The variation of schottky barrier height induced by the phase separation of inalas layers on inp hemt devices

HIGHLIGHTS

• who: Sang-Tae Lee and collaborators from the Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center have published the paper: The Variation of Schottky Barrier Height Induced by the Phase Separation of InAlAs Layers on InP HEMT Devices, in the Journal: Crystals 2022, 12, x FOR PEER REVIEW of 11/07/2022
• what: The authors report the investigation results on the effect of phase separation of InAlAs Schottky barrier layers grown by MOCVD.

SUMMARY

Phase-separated InAlAs layers grown at insufficient temperature led to surface roughness and band . . .

 



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