HIGHLIGHTS
- who: L. Butts et al. from the Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas, USA have published the research work: The wideband tunability of double Gunn diodes, in the Journal: (JOURNAL)
- what: This work has proposed the development of a novel device that uses the second peak in the velocity-field characteristics of compensated GaAs to generate low-noise, wide-bandwidth oscillations.
- how: This analysis of the domain propagation at low biases shows that the magnitude of the electric field in the traversing domain is far from the one that corresponds . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.