Topological-insulator-based terahertz modulator

HIGHLIGHTS

  • who: X. B. Wang from the (UNIVERSITY) have published the paper: Topological-insulator-based terahertz modulator, in the Journal: (JOURNAL) of 21/06/2017
  • what: The authors experimentally demonstrate an electronically-tunable terahertz intensity modulator based on Bi1:5Sb0:5Te1:8Se1:2 single crystal, one of the most insulating topological insulators. The authors propose that the extraordinarily large modulation is a consequence of thermally-activated carrier absorption in the semiconducting bulk states. The work provides a new application of topological insulators for terahertz technology. The authors demonstrate a current-driven THz intensity modulator using BSTS . . .

     

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