Total-ionizing-dose effects at ultra-high doses in algan/gan hemts

HIGHLIGHTS

• who: -Total ionizing dose and collaborators from the The substrate is always biased at , VThe annealing bias condition is identical to the bias condition applied during the irradiation. S. Mattiazzo is with the Department of Physics and Astronomy, University of Padova and INFN Sezione di Padova, Padova, Italy. E. X. Zhang, R. D. Schrimpf, and D. M. Fleetwood are with the Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, USA. have published the Article: Total-Ionizing-Dose Effects at Ultra-High Doses in AlGaN/GaN HEMTs, in the Journal: (JOURNAL)
• what: This work . . .
  

   

  

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