HIGHLIGHTS
- who: J. Bronuzzi et al. from the , Meyrin, Switzerland have published the research: Transient current technique for charged traps detection in silicon bonded interfaces, in the Journal: (JOURNAL)
- what: In this paper, a study of the electrical properties of such bond interfaces is presented. The process reported by Flötgen et_al1 allows to overcome this problem, since it requires annealing temperatures lower than 450◦ C. It is similar to the one that has been scitation.org/journal/adv performed in this work, and it is described as follows: wafers were first placed into a surface . . .
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