HIGHLIGHTS
- who: Submitted et al. from the KTH Royal Institute of Technology, Department of Materials and Nanophysics, Electrum, Kista, Sweden , Sensor Electronic Technology, Inc, Atlas Rd [, ]. Columbia, SC, USA , Department of Electrical, Computer, and Systems Engineering, and Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY, USA ( Received have published the paper: Transient photoreflectance of AlInN/GaN heterostructures, in the Journal: (JOURNAL) of 20/Nov/2012
SUMMARY
It may be induced by large and random alloy composition fluctuations affecting potentials in the conduction and the valence bands. Gorczyca et_al13 showed that localized (sub-band . . .
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