HIGHLIGHTS
- who: (Received et al. from the Institute of Materials Physics, University of Mu00fcnster, Mu00fcnster, Germany and Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany have published the Article: Treating Knock-On Displacements in Fluctuation Electron Microscopy Experiments, in the Journal: (JOURNAL)
- what: This work investigates how knock-on displacements influence fluctuation electron (FEM) FEM were conducted on amorphous silicon formed by self-ion implantation in a transmission electron microscope at 300 kV and 60 kV at various electron doses two different binnings and with two different cameras a CCD and a CMOS one. Compared with the work . . .
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