Tuning the resistive switching properties of tio films

HIGHLIGHTS

• who: N. Ghenzi et al. from the omica, Buenos Aires, Argentina Universidad Nacional de have published the paper: Tuning the resistive switching properties of TiO films, in the Journal: (JOURNAL)
• what: This work is focused on titanium-oxide-based devices, and the authors shall systematically investigate the dependence of the resulting RS characteristics with growth conditions of the insulating film. The authors show the results in Fig 2. In Figs 2(c) and 2(d), the authors show the I-V and HSL curve of the xO2=Ar=31% sample.
• future: An interesting . . .
  

   

  

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