HIGHLIGHTS
SUMMARY
Research on the deposition and characterization of HfO2 thin films has gained significant attention in the past 20 years because they are one of the major candidate materials for high-K dielectrics. Atomic layer deposition (ALD) and plasma-enhanced ALD (PEALD) have been largely employed for the deposition of HfO2 thin films, because ALDbased techniques have unique advantages, such as control over the film thickness at an Angstrom level and the high conformality of the film on the surfaces of complicated structures. The crystallinity and crystalline phases of the HfO2 thin films evolved after . . .
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