Ultra-high-speed growth of gaas solar cells by triple-chamber hydride vapor phase epitaxy

HIGHLIGHTS

• who: Ryuji Oshima et al. from the Tsukuba, Ibaraki, Japan have published the research work: Ultra-High-Speed Growth of GaAs Solar Cells by Triple-Chamber Hydride Vapor Phase Epitaxy, in the Journal: Crystals 2023, 370 of 21/02/2023
• what: __SECTION__ 4. Conclusions.
• how: In this study the effect of atmospheric-pressure HVPE growth conditions on GaAs solar-cell properties were carefully investigated in conjunction with defect analysis using deep-level transient spectroscopy (DLTS).
• future: The future research will focus on the fast growth under reduced AsH3 thermal cracking exhibited . . .
  

   

  

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