Understanding the excess 1/f noise in mosfets at cryogenic temperatures

HIGHLIGHTS

• who: /f noise et al. from the (UNIVERSITY) have published the research: Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures, in the Journal: (JOURNAL)
• what: The authors show further evidence for a strong correlation between the excess 1/f and the saturation of the subthreshold swing (SS) observed at low temperatures. The authors investigate the correlation between 1/f noise and band tail states. Considering an nMOS, the authors attempt to reproduce the effect of band tail states in the noise by inserting a trap distribution in the silicon channel with an . . .
  

   

  

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