HIGHLIGHTS
- who: BiFeO and colleagues from the Nanjing University, Nanjing, China have published the research: Uniaxial strain induced anisotropic bandgap engineering in freestanding BiFeO3 films, in the Journal: (JOURNAL)
- what: The work demonstrates that the extreme freedom in tuning the strain and symmetry of freestanding films opens a new fertile playground for novel strain-driven phases in transition metal oxides. Clearly, the AFD rotations under strain are the main reason for the anisotropic bandgap engineering in the films .
SUMMARY
With the advances in thin-film epitaxy, biaxial strain has been widely employed . . .
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