Unique coexistence of two resistive switching modes in a memristor device enables multifunctional neuromorphic computing properties

HIGHLIGHTS

• What: The authors report on hybrid memristor devices consisting of germanium dioxide nanoparticles (GeO2 NP) embedded within a poly(methyl methacrylate) (PMMA) thin film. The work shows a unique coexistence of the two resistive switching modes providing greater flexibility in device design for future adaptive and reconfigurable neuromorphic computing systems at the hardware level. The authors report the first example of a hybrid nanocomposite device that shows both volatile and nonvolatile modes that are programmable by controlling the stopping voltage. The authors show the GeS and GeS2 references to indicate that the sulfur is not incorporated into . . .
  

   

  

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