Variable range hopping model based on gaussiandisordered organic semiconductor for seebeck effect in thermoelectric device

HIGHLIGHTS

• who: Ying Zhao and Jiawei Wang from the University of Chinese Academy of Sciences, Beijing, China have published the research work: Variable Range Hopping Model Based on GaussianDisordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device, in the Journal: Micromachines 2022, 13, 707. of /2022/
• what: The authors investigate the carrier concentration dependent Seebeck coefficient in Gaussian disordered organic semiconductors (GD-OSs) for thermoelectric device applications. Compared with the conventional Mott's VRH and mobility edge model the model has a much better description of the relationship between the Seebeck coefficient and conductivity. Instead of . . .
  

   

  

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