HIGHLIGHTS
- who: Piotr Mierzwinski and Wieslaw Kuzmicz from the Faculty of Electronics and Information, Institute of Microelectronics and Optoelectronics have published the Article: VES-BJT: A Lateral Bipolar Transistor on SOI with Polysilicon Emitter and Collector, in the Journal: Electronics 2023, 1871 of /2023/
- what: This paper summarizes the results of investigations of bipolar transistors made in_(Vertical Slit Transistor-based Integrated Circuits) This was proposed by W. Maly as an alternative to classical bulk CMOS However the basic cell can be used not only to make field effect transistors but also to make bipolar transistors . . .
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