Wavelength dependence of laser-induced excitation dynamics in silicon

HIGHLIGHTS

• who: Prachi Venkat from the KPSI, National Institutes for Quantum Science and Technology, ‑1‑7, Umemidai, Kizugawa, Kyoto, ‑0125, Japan have published the research: Wavelength dependence of laser-induced excitation dynamics in silicon, in the Journal: (JOURNAL)
• what: Around the band gap energy the authors employ interpolation to the model described in Ref . 𝛾e(h) is the Auger re-combination coefficient and 𝜃e(h) is the impact ionization coefficient . The experiments where damaged area is considered means that the damage probability is 100 %.
• how: Comparison of the calculated threshold with Smirnov et_al data . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.