X-ray diffraction imaging of fully packaged n–p–n transistors under accelerated ageing conditions

HIGHLIGHTS

• who: Brian K. Tanner and colleagues from the Department of Physics, Durham University, South Road, Durham , LE, United Kingdom, bSchool of Electronic have published the research: X-ray diffraction imaging of fully packaged nu2013pu2013n transistors under accelerated ageing conditions, in the Journal: (JOURNAL)
• what: The authors report a detailed examination of the diffraction contrast in new experiments and make interpretions in terms of emitter current crowding and resistive heating in the junction regions.

SUMMARY

Accelerated ageing experiments under conditions of extreme forward bias were undertaken on transistors Q3, Q4 and Q5 . . .

 



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